High Breakdown Voltage and Low Buffer Trapping in Superlattice GaN-on-Silicon Heterostructures for High Voltage Applications

Breakdown Voltage of High-voltage GaN FETs

GaN FETs offer superior advantages in high-voltage and high-temperature operation due to its large bandgap (3.4 eV) and high breakdown field strength (3.3 MV/cm). This combination of the large bandgap and high breakdown field makes these devices very attractive for power switching applications. In this regard, a key figure of merit is the breakdown voltage of the transistor, which must be high ...

Breakdown behaviour of high-voltage GaN-HEMTs

A New Low-Voltage, Low-Power and High-Slew Rate CMOS Unity-Gain Buffer

Class-AB circuits, which are able to deal with currents several orders of magnitude larger than their quiescent current, are good candidates for low-power and high slew-rate analog design. This paper presents a novel topology of a class AB flipped voltage follower (FVF) that has better slew rate and the same power consumption as the conventional class-AB FVF buffer previously presented in liter...

A High Efficiency Low-Voltage Soft Switching DC–DC Converter for Portable Applications

This paper presents a novel control method to improve the efficiency of low-voltage DC-DC converters at light loads. Pulse Width Modulation (PWM) converters have poor efficiencies at light loads, while pulse frequency modulation (PFM) control is more efficient for the same cases. Switching losses constitute a major portion of the total power loss at light loads. To decrease the switching losses...

Improving the Performance of GaN Power Devices for High Breakdown Voltage and High Temperature Operation

tion as an alternative to Si as a semiconductor material for ultra-low-loss power devices. Early development of GaN was carried out in the area of light-emitting devices—green LEDs, lasers, etc.—but its superior performance as noted above and the needs of society led to R&D work for electronic devices being conducted world-wide. Specifically, the AlGaN/GaN HFET structure permits the formation o...